JSPM's Imperial College of Engineering and Research, Wagholi   Accredited "A" Grade by NAAC

Careers | Campuses | Student's Verification

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  • Dr. KULKARNI VINODKUMAR RAJARAMPANTH

  • ASSOCIATE PROFESSOR
  • M.Sc.,M.Phil.,Ph.D,B.Ed.
  • Teaching Experience: 14 Years
  • Industrial Experience: 6 Months
  • E-Mail Address: vrkulkarni_es@jspmicoer.edu.in

Subject Taught

Name of Subject Level- UG/PG
Applied Science-I UG
Applied Science-II UG
Engineering Physics UG

Area of Interest & Expertise

  • Area of Interest: Solid State Physics and Nuclear Physics
  • Research Interest: Accelerator and Nuclear Physics
  • Technical Skills: MS Office
  • Certifications: MSCIT
  • Professional Membership: Nil
  • Professional Contribution: Nil

Journals/Conferences/Books

Sr. No. Title of Journal/Conference Paper Presented/Published Name of Publisher/Conference Year
1 Bias Dependent Charge Trapping in MOSFET’s during 1 and 6MeV electron irradiation. Presented & Published Nuclear Instruments and Methods in Physics Research B 2008
2 Damage Induced by High Energy multiply charged Oxygen ions in Oxide coated silicon. Presented & Published Nuclear Instruments and Methods in Physics Research B 2006
3 Influence of High-Energy Fluorine Ion as a Contamination on n-channel MOS-structure. Presented & Published Presented in INDO-GERMAN Workshop on “Synthesis and Modification of Nano Structured Materials by Energetic Ion Beams” Poster-99 2005
4 Use of Phototransistor as a Radiation Monitor. Presented & Published Journal of Medical Physics 2005
5 A Sensitive n-MOSFET Dosimetry for High energy X-radiations. Presented & Published Journal of Medical Physics 2005
6 In-situ MOSFET Dosimetry for High Energy X-ray and Electrons. Presented & Published Journal of Medical Physics 2004
7 MeV Energy Fluorine ion induced interface and oxide states in n-MOS structure. Presented & Published Presented in 15th International Workshop on Inelastic Ion-Surface Collision (IISC-15)Oct 17-22, ISE-SHIMA, JAPAN 2004
8 Behaviour of Channel Mobility In 6MeV Electron Irradiation MOS-StructureUnder Bias Condition at Room Temperature. Presented & Published Department of Atomic Energy-Solid State Physics Symposium 2003

Other Activities

Sr. No. Title of Activity Details/ Description
1 GFM,

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